An Ultra Low-Power Dual-Band IR-UWB Transmitter in 130-nm CMOS

Description:

In this brief, a 0-960-MHz/3.1-5-GHz dual-band ultra low-power impulse-radio ultrawideband transmitter is presented. The pulse transmitter integrated circuit is fabricated using a 130-nm CMOS process with the core die area of 0.1 mm 2 . At 1-MHz pulse repetition frequency, the power consumption values are measured in the lower and the upper bands as 5.6 and 31 μW, respectively. The lower and the upper band “off-time” power consumptions of the transmitter are 0.36 and 1.7 μW, respectively. The dc-to-radio-frequency conversion efficiencies are 11.1% in the lower band and 4.8% in the upper band.